| 型号 |
订购 |
价格(不含税)
以实际报价为准 |
制造商 |
通道方式 | 通道类型 | 配置 | 最大门源电压 | 最大连续漏极电流 | 最大漏极源极电阻 | 典型门极充电 @ Vgs | 典型断开时延 | 典型接通时延 | 输出功率 | 供应商电流 |
IRFL110 ( TUBE ) |
|
毎管：1 个
1+ RMB1,439.60
4+ RMB1,168.20
10+ RMB979.40 |
Vishay |
增强功能 | N | 单路;双漏极 | ±20V | 1.5A | 0.54Ω | - | 15ns | 6.9ns | - | |
Trans MOSFET P-ch -60V -12A DPAK |
|
/个 (每包:2个)
2+ RMB7.61
50+ RMB6.31
200+ RMB4.76
500+ RMB4.70
1000+ RMB4.47 |
ON Semiconductor |
增强功能 | P | 单路 | ±20V | 12A | 0.18Ω | - | 26ns | 10ns | - | |
MOSFET,FDS5680 |
|
/个 (每包:5个)
5+ RMB23.48
25+ RMB14.28
100+ RMB9.97
250+ RMB9.38
500+ RMB8.91 |
Fairchild Semiconductor |
增强功能 | N | 单路;四漏极,三源 | ±20V | 8A | 0.02Ω | - | 16ns | 13ns | - | |
MOSFET,FDS3912 |
|
/个 (每包:5个)
5+ RMB17.94
25+ RMB15.10
100+ RMB10.92
250+ RMB8.32
500+ RMB8.26 |
Fairchild Semiconductor |
增强功能 | N | 双路;双漏极 | ±20V | 3A | 0.125Ω | - | 23ns | 8.5ns | - | |
MOSFET,Pch,60V/20A/0.045ohm,TO-220FL |
|
个
1+ RMB29.85
25+ RMB24.66
100+ RMB22.42
250+ RMB19.59
500+ RMB17.94 |
|
增强功能 | P | 单路 | ±20V | 20A | 0.045Ω | - | - | - | - | |
MOSFET N-ch 20.8A 650V MDmesh V TO247 |
|
个
1+ RMB110.92
5+ RMB95.58
10+ RMB85.55
25+ RMB75.52
50+ RMB67.85 |
STMicroelectronics |
增强功能 | N | 单路 | ±25V | 20.8A | 0.079Ω | - | 65ns | 61ns | - | |
MOSFET,FQD13N10TM |
|
/个 (每包:5个)
5+ RMB10.09
25+ RMB8.44
100+ RMB6.73
250+ RMB5.06
500+ RMB4.50 |
Fairchild Semiconductor |
增强功能 | N | 单路 | ±25V | 10A | 0.18Ω | - | 20ns | 5ns | - | |
MOSFET,FQP4N80 |
|
/个 (每包:5个)
5+ RMB13.10
25+ RMB9.26
100+ RMB7.02
250+ RMB6.02
500+ RMB5.78 |
Fairchild Semiconductor |
增强功能 | N | 单路 | ±30V | 3.9A | 3.6Ω | - | 35ns | 16ns | - | |
SEMI,TSM6981DCA RV |
|
/个 (每包:500个)
500+ RMB4.05
1000+ RMB3.88
2500+ RMB3.71 |
Taiwan Semiconductor |
增强功能 | P | 双路;双源 | ±8V | 5A | 0.03Ω | - | 71ns | 25ns | - | |
MOSFET,HUF75339P3 |
|
/个 (每包:5个)
5+ RMB12.63
25+ RMB9.62
100+ RMB8.32
250+ RMB7.67
500+ RMB7.20 |
Fairchild Semiconductor |
增强功能 | N | 单路 | ±20V | 75A | 0.012Ω | - | 20ns | 15ns | - | |
MOSFET,Nch,700/10A/1.0ohm,TO-220NIS |
|
个
1+ RMB29.15
25+ RMB24.43
100+ RMB19.23
250+ RMB17.82
500+ RMB16.40 |
Toshiba |
增强功能 | N | 单路 | ±30V | 10A | 1Ω | - | - | - | - | |
MOSFET,FQPF13N06L |
|
/个 (每包:5个)
5+ RMB9.15
25+ RMB6.20
100+ RMB4.24
250+ RMB4.06
500+ RMB3.87 |
Fairchild Semiconductor |
增强功能 | N | 单路 | ±20V | 10A | 0.11Ω | - | 20ns | 8ns | - | |
Trans MOSFET N-ch 60V 0.26A SOT-23 |
|
/个 (每包:25个)
25+ RMB0.66
3125+ RMB0.52
6250+ RMB0.44
12500+ RMB0.38
25000+ RMB0.37 |
ON Semiconductor |
增强功能 | N | 单路 | ±20V | 0.26A | 2.5Ω | - | 4.8ns | 1.7ns | - | |
MOSFET N-ch HEXFET 100V 97A TO247AC |
|
/个 (每包:2个)
2+ RMB24.43
10+ RMB20.65
20+ RMB18.41
40+ RMB16.28
100+ RMB14.75 |
International Rectifier |
增强功能 | N | 单路 | ±20V | 97A | 0.009Ω | - | 43ns | 16ns | - | |
MOSFET,FQD30N06TF |
|
/个 (每包:5个)
5+ RMB11.51
25+ RMB9.74
100+ RMB7.79
250+ RMB5.90
500+ RMB5.46 |
Fairchild Semiconductor |
增强功能 | N | 单路 | ±25V | 22.7A | 0.045Ω | - | 35ns | 10ns | - | |
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