| 型号 |
订购 |
价格(不含税)
以实际报价为准 |
制造商 |
通道方式 | 通道类型 | 配置 | 最大门源电压 | 最大连续漏极电流 | 最大漏极源极电阻 | 典型门极充电 @ Vgs | 典型断开时延 | 典型接通时延 | 输出功率 | 供应商电流 |
MOSFET,FDS5690 |
|
/个 (每包:5个)
5+ RMB23.48
25+ RMB14.28
100+ RMB9.97
250+ RMB8.08
500+ RMB7.67 |
Fairchild Semiconductor |
增强功能 | N | 单路;四漏极,三源 | ±20V | 7A | 0.028Ω | - | 24ns | 10ns | - | |
2SJ212-AZ |
|
个
1+ RMB6.95
50+ RMB5.56
200+ RMB4.50 |
NEC |
增强功能 | P | 单路;双漏极 | ±20V | 0.5A | 3Ω | - | 95ns | 130ns | - | |
IRF7703PBF |
|
/个 (每包:5个)
5+ RMB15.81
125+ RMB11.15
500+ RMB9.09
1000+ RMB9.03
2000+ RMB8.67 |
International Rectifier |
增强功能 | P | 单路 | ±20V | 6A | 0.028Ω | - | 155ns | 43ns | - | |
MOSFET,FDS8870 |
|
/个 (每包:5个)
5+ RMB14.40
25+ RMB10.27
100+ RMB8.67
250+ RMB7.85
500+ RMB7.55 |
Fairchild Semiconductor |
增强功能 | N | 单路;四漏极,三源 | ±20V | 18A | 0.0042Ω | - | 60ns | 9ns | - | |
MOSFET,FDS9933A |
|
/个 (每包:5个)
5+ RMB10.80
25+ RMB8.14
100+ RMB6.20
250+ RMB4.50
500+ RMB4.34 |
Fairchild Semiconductor |
增强功能 | P | 双路;双漏极 | ±8V | 3.8A | 0.075Ω | - | 31ns | 6ns | - | |
SEMI,PH20100S |
|
/个 (每包:2个)
2+ RMB31.15
20+ RMB26.90
100+ RMB25.84
200+ RMB24.19
500+ RMB23.72 |
NXP |
增强功能 | N | 单路;三源 | ±20V | 34.3A | 0.023Ω | - | 47ns | 23ns | - | |
Transistor,MOSFET,STD35NF3LL |
|
/个 (每包:5个)
5+ RMB8.37
25+ RMB6.17
100+ RMB4.91
250+ RMB4.79
500+ RMB4.67 |
STMicroelectronics |
增强功能 | N | 单路 | ±16V | 35A | 0.0195Ω | - | 20ns | 17ns | - | |
MOSFET,Nch,250V/20A/0.105ohm,TO-220NIS |
|
个
1+ RMB23.25
25+ RMB19.35
100+ RMB15.46
250+ RMB14.28
500+ RMB13.10 |
Toshiba |
增强功能 | N | 单路 | ±30V | 20A | 0.105Ω | - | - | - | - | |
MOSFET N-ch 31A 500V SuperMESH TO247 |
|
个
1+ RMB63.13
5+ RMB54.52
10+ RMB48.73
25+ RMB43.07
50+ RMB38.70 |
STMicroelectronics |
增强功能 | N | 单路 | ±30V | 31A | 0.13Ω | - | 129ns | 44.5ns | - | |
MOSFET N+N,TR1 24V/8A,TR2 24V/8A,ECH8 |
|
/个 (每包:5个)
5+ RMB4.18
50+ RMB3.46
200+ RMB2.87
500+ RMB2.57
1000+ RMB2.45 |
Sanyo |
- | - | - | - | - | - | - | - | - | - | |
MOSFET,FDS8928A |
|
/个 (每包:5个)
5+ RMB15.58
25+ RMB11.56
100+ RMB9.56
250+ RMB7.73
500+ RMB7.20 |
Fairchild Semiconductor |
增强功能 | N,P | 双路;双漏极 | - | - | - | - | - | - | - | |
Power MOSFET N-Ch 1000V 22A SOT-227 |
|
个
1+ RMB944.00
2+ RMB790.60
10+ RMB708.00 |
IXYS |
增强功能 | N | 单路 | ±30V | 22A | 0.6Ω | - | 80ns | 36ns | - | |
Transistor,MOSFET,STD30NF06 |
|
/个 (每包:5个)
5+ RMB8.74
25+ RMB6.54
100+ RMB5.19
250+ RMB5.07
500+ RMB4.94 |
STMicroelectronics |
增强功能 | N | 单路 | ±20V | 28A | 0.028Ω | - | 50ns | 20ns | - | |
2SK3662(F) |
|
个
1+ RMB16.99
100+ RMB13.33
400+ RMB10.69 |
Toshiba |
增强功能 | N | 单路 | ±20V | 35A | 0.0125Ω | - | - | - | - | |
MOSFET,Pch 30V/1A+SBD 30V/0.5A,MCPH5 |
|
/个 (每包:5个)
5+ RMB6.31
25+ RMB5.24
200+ RMB4.40
500+ RMB3.89
1000+ RMB3.71 |
Sanyo |
- | - | - | - | - | - | - | - | - | - | |
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