| 型号 |
订购 |
价格(不含税)
以实际报价为准 |
制造商 |
通道方式 | 通道类型 | 配置 | 最大门源电压 | 最大连续漏极电流 | 最大漏极源极电阻 | 典型门极充电 @ Vgs | 典型断开时延 | 典型接通时延 | 输出功率 | 供应商电流 |
MOSFET N-ch 120A 75V STripFET III D2PAK |
|
/个 (每包:2个)
2+ RMB24.07
10+ RMB20.77
20+ RMB18.53
50+ RMB16.40
100+ RMB14.75 |
STMicroelectronics |
增强功能 | N | 单路 | ±20V | 120A | 0.0075Ω | - | 130ns | 30ns | - | |
MOSFET,N-ch,20V/1.8A,0.39ohm@1.8V,MCPH3 |
|
/个 (每包:5个)
5+ RMB3.46
50+ RMB2.86
200+ RMB2.38
500+ RMB2.03
1000+ RMB2.02 |
Sanyo |
- | - | - | - | - | - | - | - | - | - | |
2SK1828(F) |
|
/个 (每包:10个)
10+ RMB1.82
100+ RMB1.50
400+ RMB1.07 |
Toshiba |
增强功能 | N | 单路 | 10V | 0.05A | 40Ω | - | - | - | - | |
IRL3705ZSPBF |
|
/个 (每包:5个)
5+ RMB23.60
125+ RMB11.92
500+ RMB11.76
1250+ RMB11.62
2500+ RMB11.41 |
International Rectifier |
增强功能 | N | 单路 | ±16V | 86A | 0.008Ω | - | 26ns | 17ns | - | |
MOSFET N-ch 2.5A 800V SuperMESH TO220 |
|
/个 (每包:5个)
5+ RMB8.61
25+ RMB7.43
50+ RMB6.67
125+ RMB5.85
250+ RMB5.27 |
STMicroelectronics |
增强功能 | N | 单路 | ±30V | 2.5A | 4.5Ω | - | 36ns | 17ns | - | |
MOSFET,P-ch,30V/3.5A,0.165ohm@4V,CPH3 |
|
/个 (每包:5个)
5+ RMB5.12
50+ RMB4.28
200+ RMB3.58
500+ RMB3.19
1000+ RMB3.03 |
Sanyo |
- | - | - | - | - | - | - | - | - | - | |
MOSFET,N+N,20V/3A,0.15ohm@1.8V,EMH8 |
|
/个 (每包:5个)
5+ RMB5.00
50+ RMB4.17
200+ RMB3.46
500+ RMB3.10
1000+ RMB2.95 |
Sanyo |
- | - | - | - | - | - | - | - | - | - | |
MOSFET,FQA7N80C_F109 |
|
个
1+ RMB33.98
25+ RMB24.31
100+ RMB18.64
250+ RMB15.46
500+ RMB15.22 |
Fairchild Semiconductor |
增强功能 | N | 单路 | ±30V | 7A | 1.9Ω | - | 50ns | 35ns | - | |
MOSFET N-ch HEXFET 60V 270A D2PAK |
|
/个 (每包:2个)
2+ RMB40.71
10+ RMB34.46
20+ RMB30.80
40+ RMB27.14
100+ RMB24.43 |
International Rectifier |
增强功能 | N | 单路 | ±20V | 270A | 0.0025Ω | - | 118ns | 16ns | - | |
IRFZ46ZSPBF |
|
/个 (每包:5个)
5+ RMB20.53
125+ RMB18.53
500+ RMB16.17
1000+ RMB16.17
2000+ RMB16.17 |
International Rectifier |
增强功能 | N | 单路 | ±20V | 51A | 0.0136Ω | - | 37ns | 13ns | - | |
STS8DNH3LL MOSFET |
|
/个 (每包:10个)
10+ RMB9.40
50+ RMB6.56
200+ RMB5.24
500+ RMB4.38
1000+ RMB3.71 |
STMicroelectronics |
增强功能 | N | 双路;双漏极 | ±16V | 8A | 0.022Ω | - | 23ns | 12ns | - | |
MOSFET N-ch 13A 1000V SuperMESH TO247 |
|
个
1+ RMB73.75
5+ RMB63.72
10+ RMB56.99
25+ RMB50.15
50+ RMB45.19 |
STMicroelectronics |
增强功能 | N | 单路 | ±30V | 13A | 0.7Ω | - | 145ns | 45ns | - | |
DIGITAL FET FDV303N |
|
毎卷：1 个
1+ RMB2,737.60 |
Fairchild Semiconductor |
增强功能 | N | 单路 | 8V | 0.68A | 0.45Ω | - | 17ns | 3ns | - | |
|
|
毎管：1 个 |
International Rectifier |
增强功能 | N | 单路 | ±20V | 17A | 0.075Ω | - | 19ns | 4.9ns | - | |
MOSFET,FQB55N10TM |
|
/个 (每包:5个)
5+ RMB18.17
25+ RMB14.63
100+ RMB11.09
250+ RMB10.56
500+ RMB10.21 |
Fairchild Semiconductor |
增强功能 | N | 单路 | ±25V | 55A | 0.026Ω | - | 110ns | 25ns | - | |
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