| 型号 |
订购 |
价格(不含税)
以实际报价为准 |
制造商 |
通道方式 | 通道类型 | 配置 | 最大门源电压 | 最大连续漏极电流 | 最大漏极源极电阻 | 典型门极充电 @ Vgs | 典型断开时延 | 典型接通时延 | 输出功率 | 供应商电流 |
晶体管,MOSFET,N 沟道,表面安装,FDV303N |
|
个
1+ RMB2.48
25+ RMB1.27
100+ RMB1.14
250+ RMB1.13
500+ RMB1.12 |
Fairchild Semiconductor |
增强功能 | N | 单路 | 8V | 0.68A | 0.45Ω | - | 17ns | 3ns | - | |
晶体管,MOSFET,N 沟道,BUZ323 |
|
个
1+ RMB93.22
25+ RMB63.72
100+ RMB60.77 |
Infineon |
增强功能 | N | 单路 | ±20V | 15A | 0.3Ω | - | 270ns | 40ns | - | |
晶体管,MOSFET,功率,CoolMOS,SPW47N60C3 |
|
个
1+ RMB115.64
25+ RMB97.35
100+ RMB87.91
250+ RMB87.32
500+ RMB86.73 |
Infineon |
增强功能 | N | 单路 | ±20V | 47A | 0.07Ω | - | 111ns | 18ns | - | |
晶体管, MOSFET, IRF830AL |
|
个 |
International Rectifier |
增强功能 | N | 单路 | ±30V | 5A | 1.4Ω | - | 21ns | 10ns | - | |
晶体管,MOSFET,IRF9530 |
|
个 |
International Rectifier |
增强功能 | P | 单路 | ±20V | 12A | 0.3Ω | - | 31ns | 12ns | - | |
晶体管,MOSFET,N 沟道,IRFZ46N |
|
个
1+ RMB17.82
25+ RMB12.27
100+ RMB10.68
250+ RMB10.15
500+ RMB9.68 |
International Rectifier |
增强功能 | N | 单路 | ±20V | 53A | 0.0165Ω | - | 52ns | 14ns | - | |
晶体管,MOSFET,N 沟道,表面安装,SUP75N030 |
|
个
1+ RMB21.24
25+ RMB21.12
100+ RMB21.00
250+ RMB20.89
500+ RMB20.77 |
Vishay |
增强功能 | N | 单路 | ±20V | 75A | 0.004Ω | - | 190ns | 20ns | - | |
HEXFET IRFIBC20GPBF |
|
个
1+ RMB17.11
25+ RMB11.80
100+ RMB9.15
250+ RMB7.38
500+ RMB7.32 |
Vishay |
- | - | - | - | - | - | - | - | - | - | |
ER - Transistor, MOSFET, N Channel, STP9NB50FP |
|
个 |
STMicroelectronics |
增强功能 | N | 单路 | ±30V | 4.9A | 0.85Ω | - | - | 19ns | - | |
晶体管, MOSFET, P沟道, 表面安装, IRFR9024 |
|
个 |
Vishay |
增强功能 | P | 单路 | ±20V | 8.8A | 0.28Ω | - | 15ns | 13ns | - | |
晶体管,MOSFET,IRFBE20 |
|
个
1+ RMB20.89
25+ RMB16.76
100+ RMB10.86
250+ RMB10.56
500+ RMB10.50 |
Vishay |
增强功能 | N | 单路 | ±20V | 1.8A | 6.5Ω | - | 58ns | 8.2ns | - | |
晶体管,MOSFET,N 沟道,IRFZ34N |
|
个
1+ RMB15.22
25+ RMB11.27
100+ RMB6.73
250+ RMB6.25
500+ RMB6.14 |
International Rectifier |
增强功能 | N | 单路 | ±20V | 29A | 0.04Ω | - | 31ns | 7ns | - | |
SUD23N06-31L-E3 |
|
/个 (每包:5个)
5+ RMB14.75
25+ RMB11.80
100+ RMB10.50
250+ RMB9.20
500+ RMB8.97 |
Vishay |
增强功能 | N | 单路 | ±20V | 23A | 0.031Ω | - | 30ns | 8ns | - | |
晶体管,MOSFET,双 N/N,表面安装,IRF7311 |
|
个
1+ RMB24.31
25+ RMB16.76
100+ RMB14.04
250+ RMB13.92
500+ RMB13.81 |
International Rectifier |
增强功能 | N | 双路;双漏极 | ±12V | 6.6A | 0.029Ω | - | 38ns | 8.1ns | - | |
HEXFET IRLR8103VTRPBF |
|
个
1+ RMB14.40
25+ RMB12.04
100+ RMB11.92
250+ RMB11.51
500+ RMB11.09 |
International Rectifier |
- | - | - | - | - | - | - | - | - | - | |
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