型号 |
订购 |
价格(不含税) 以实际报价为准 |
制造商 |
通道方式 | 通道类型 | 配置 | 最大门源电压 | 最大连续漏极电流 | 最大漏极源极电阻 | 典型门极充电 @ Vgs | 典型断开时延 | 典型接通时延 | 输出功率 | 供应商电流 |
SEMI,IRF7303QPBF |
|
/个 (每包:5个) 5+ RMB9.62 25+ RMB8.61 100+ RMB7.38 250+ RMB6.37 500+ RMB6.20 |
International Rectifier |
增强功能 | N | 双路;双漏极 | ±20V | 4.9A | 0.05Ω | - | 22ns | 6.8ns | - | |
IRF9Z34SPBF |
|
/个 (每包:5个) 5+ RMB34.46 125+ RMB31.39 500+ RMB27.26 |
Vishay |
增强功能 | P | 单路 | ±20V | 18A | 0.14Ω | - | 20ns | 18ns | - | |
MOSFET,Nch,650V/3A,3.9ohm@10V,TO-220FI(L |
|
/个 (每包:5个) 5+ RMB7.85 25+ RMB6.08 100+ RMB4.87 |
Sanyo |
增强功能 | N | 单路 | ±30V | 3A | 3.9Ω | - | 28ns | 12ns | - | |
MOSFET,FCB20N60TM |
|
个 1+ RMB64.31 25+ RMB49.32 100+ RMB39.53 250+ RMB30.68 500+ RMB26.90 |
Fairchild Semiconductor |
增强功能 | N | 单路 | ±30V | 20A | 0.19Ω | - | 230ns | 62ns | - | |
N-Channel MOSFET,2A,30V,625mW,SOT23 |
|
/个 (每包:25个) 25+ RMB4.55 125+ RMB3.80 500+ RMB3.42 |
DiodesZetex |
- | - | - | - | - | - | - | - | - | - | |
MOSFET N-ch Audio HEXFET 150V 25A TO220 |
|
/个 (每包:2个) 2+ RMB19.82 10+ RMB16.76 20+ RMB14.99 40+ RMB13.22 100+ RMB12.04 |
International Rectifier |
增强功能 | N | 单路 | ±20V | 25A | 0.0725Ω | - | 17.1ns | 8.6ns | - | |
MOSFET,FQP30N06 |
|
/个 (每包:5个) 5+ RMB10.97 25+ RMB7.73 100+ RMB6.08 250+ RMB5.06 500+ RMB4.83 |
Fairchild Semiconductor |
增强功能 | N | 单路 | ±25V | 30A | 0.04Ω | - | 35ns | 10ns | - | |
MOSFET,Nch,180V/10A,0.83ohm,TO-3P(N) |
|
个 1+ RMB34.22 25+ RMB28.20 100+ RMB22.07 250+ RMB20.30 500+ RMB18.64 |
Toshiba |
增强功能 | N | 单路 | ±20V | 10A | - | - | - | - | - | |
Transistor, IRF1405SPBF |
|
个 1+ RMB31.74 10+ RMB28.08 50+ RMB23.13 100+ RMB19.23 250+ RMB16.40 |
International Rectifier |
增强功能 | N | 单路 | ±20V | 131A | 0.0053Ω | - | 130ns | 13ns | - | |
MOSFET N-ch HEXFET 60V 160A TO220AB |
|
/个 (每包:2个) 2+ RMB25.96 10+ RMB21.95 20+ RMB19.59 40+ RMB17.35 100+ RMB15.58 |
International Rectifier |
增强功能 | N | 单路 | ±20V | 160A | 0.0042Ω | - | 40ns | 15ns | - | |
MOSFET,FDT439N |
|
/个 (每包:5个) 5+ RMB8.26 25+ RMB6.14 100+ RMB4.61 250+ RMB4.02 500+ RMB3.84 |
Fairchild Semiconductor |
增强功能 | N | 单路;双漏极 | ±8V | 6.3A | 0.072Ω | - | 30ns | 6ns | - | |
MOSFET,FDN360P |
|
/个 (每包:5个) 5+ RMB8.61 25+ RMB5.22 100+ RMB4.07 250+ RMB2.94 500+ RMB2.80 |
Fairchild Semiconductor |
增强功能 | P | 单路 | ±20V | 2A | 0.08Ω | - | 11ns | 6ns | - | |
IRF6668 |
|
/个 (每包:5个) 5+ RMB29.74 125+ RMB27.14 500+ RMB23.48 1000+ RMB23.48 2000+ RMB23.48 |
International Rectifier |
增强功能 | N | 单路;四漏极,双源 | ±20V | 55A | 0.015Ω | - | 7.1ns | 19ns | - | |
SEMI,PHP20N06T |
|
/个 (每包:5个) 5+ RMB10.03 25+ RMB8.61 100+ RMB8.26 500+ RMB7.73 1250+ RMB7.55 |
NXP |
增强功能 | N | 单路 | ±20V | 20.3A | 0.075Ω | - | 70ns | 10ns | - | |
SEMI,IRFB3206PBF |
|
个 1+ RMB41.30 25+ RMB36.70 100+ RMB28.32 250+ RMB24.43 500+ RMB23.84 |
International Rectifier |
增强功能 | N | 单路 | ±20V | 210A | 0.003Ω | - | 55ns | 19ns | - | |
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