| 型号 |
订购 |
价格(不含税)
以实际报价为准 |
制造商 |
通道方式 | 通道类型 | 配置 | 最大门源电压 | 最大连续漏极电流 | 最大漏极源极电阻 | 典型门极充电 @ Vgs | 典型断开时延 | 典型接通时延 | 输出功率 | 供应商电流 |
Transistor,MOSFET,STP16NS25 |
|
/个 (每包:5个)
5+ RMB14.99
25+ RMB11.08
100+ RMB8.80
250+ RMB8.58
500+ RMB8.37 |
STMicroelectronics |
增强功能 | N | 单路 | ±20V | 16A | 0.28Ω | - | - | 14.5ns | - | |
MOSFET,FDP3652 |
|
/个 (每包:5个)
5+ RMB26.55
25+ RMB18.05
100+ RMB12.98
250+ RMB12.86
500+ RMB12.39 |
Fairchild Semiconductor |
增强功能 | N | 单路 | ±20V | 9A | 0.016Ω | - | 26ns | 12ns | - | |
MOSFET,N-ch,20V/2A,0.18ohm@2.5V,MCPH3 |
|
/个 (每包:5个)
5+ RMB4.18
50+ RMB3.46
200+ RMB2.87
500+ RMB2.57
1000+ RMB2.45 |
Sanyo |
- | - | - | - | - | - | - | - | - | - | |
Transistor,MOSFET,SOT223,BUK127-50DL |
|
/个 (每包:5个)
5+ RMB14.51
25+ RMB7.35
100+ RMB7.28
250+ RMB7.19
500+ RMB7.06 |
NXP |
增强功能 | N | 单路;双漏极 | - | 0.7A | 0.38, 0.2Ω | - | 25000ns | 5000ns | - | |
MOSFET,FDN5630 |
|
/个 (每包:5个)
5+ RMB6.43
25+ RMB5.19
100+ RMB3.93
250+ RMB2.91
500+ RMB2.77 |
Fairchild Semiconductor |
增强功能 | N | 单路 | ±20V | 1.7A | 0.1Ω | - | 15ns | 10ns | - | |
Transistor,MOSFET,STW14NM50FD |
|
个
1+ RMB27.02
25+ RMB19.94
100+ RMB16.87
250+ RMB16.40
500+ RMB16.05 |
STMicroelectronics |
增强功能 | N | 单路 | ±30V | 14A | 0.4Ω | - | 39ns | 19ns | - | |
MOSFET N-ch HEXFET 150V 105A D2PAK-7 |
|
个
1+ RMB49.44
5+ RMB41.65
10+ RMB37.29
20+ RMB33.04
50+ RMB29.74 |
International Rectifier |
增强功能 | N | 单路;五源 | ±20V | 105A | 0.0118Ω | - | 37ns | 18ns | - | |
TPC8020-H(Q) |
|
/个 (每包:5个)
5+ RMB12.51
50+ RMB10.33
200+ RMB8.50 |
Toshiba |
增强功能 | N | 单路;四漏极,三源 | ±20V | 13A | 0.009Ω | - | - | - | - | |
MOSFET,FQPF9N90C |
|
/个 (每包:5个)
5+ RMB19.71
25+ RMB17.70
100+ RMB15.10
250+ RMB13.81
500+ RMB12.86 |
Fairchild Semiconductor |
增强功能 | N | 单路 | ±30V | 8A | 1.4Ω | - | 100ns | 50ns | - | |
MOSFET N-ch HEXFET 30V 87A D2PAK |
|
/个 (每包:5个)
5+ RMB17.23
25+ RMB14.51
50+ RMB12.98
100+ RMB11.51
250+ RMB10.33 |
International Rectifier |
增强功能 | N | 单路 | ±20V | 87A | 0.0063Ω | - | 16ns | 13ns | - | |
Transistor,MOSFET,N-channel,isolated package,STP55NF06FP |
|
/个 (每包:5个)
5+ RMB12.86
25+ RMB9.49
100+ RMB7.55
250+ RMB7.36
500+ RMB7.17 |
STMicroelectronics |
增强功能 | N | 单路 | ±20V | 50A | 0.018Ω | - | 36ns | 20ns | - | |
MOSFET,N-ch,30V/0.15A,12.8ohm@1.5V,MCP |
|
/个 (每包:10个)
10+ RMB1.43
50+ RMB1.19
200+ RMB0.96
500+ RMB0.90
1000+ RMB0.85 |
Sanyo |
- | - | - | - | - | - | - | - | - | - | |
MOSFET,FDS6681Z |
|
/个 (每包:5个)
5+ RMB13.81
25+ RMB11.03
100+ RMB9.32
250+ RMB8.50
500+ RMB8.02 |
Fairchild Semiconductor |
增强功能 | N | 单路;四漏极,三源 | ±20V | 21A | 3.6Ω | - | 73ns | 11ns | - | |
MOSFET,Nch,60V/5A/0.05ohm,SOP8 |
|
/个 (每包:5个)
5+ RMB10.27
50+ RMB8.97
100+ RMB7.08
125+ RMB5.78
200+ RMB6.90 |
Toshiba |
增强功能 | N | 双路;双漏极 | ±20V | 5A | 0.05Ω | - | - | - | - | |
MOSFET,FDY101PZ |
|
/个 (每包:20个)
20+ RMB1.60
100+ RMB1.42
200+ RMB1.29
400+ RMB1.16
1000+ RMB0.97 |
Fairchild Semiconductor |
增强功能 | P | 单路 | ±8V | 0.15A | 8Ω | - | 8ns | 6ns | - | |
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