| 型号 |
订购 |
价格(不含税)
以实际报价为准 |
制造商 |
通道方式 | 通道类型 | 配置 | 最大门源电压 | 最大连续漏极电流 | 最大漏极源极电阻 | 典型门极充电 @ Vgs | 典型断开时延 | 典型接通时延 | 输出功率 | 供应商电流 |
MOSFET 600V 13A 0.5 Ohm FRED TO220IS |
|
/个 (每包:2个)
2+ RMB40.36
10+ RMB35.40
40+ RMB28.20
100+ RMB27.26
200+ RMB26.08 |
Toshiba |
增强功能 | N | 单路 | ±30V | 13A | 0.5Ω | - | - | - | - | |
MOSFET,P-ch,60V/4A,0.565ohm@4V,TP-FA |
|
/个 (每包:5个)
5+ RMB7.85
25+ RMB6.55
200+ RMB5.46
500+ RMB4.87
700+ RMB4.64 |
Sanyo |
- | - | - | - | - | - | - | - | - | - | |
MOSFET,Nch 15V/1.6A+SBD 15V/0.5A,SCH6 |
|
/个 (每包:5个)
5+ RMB3.69
50+ RMB3.10
200+ RMB2.62
500+ RMB2.30
1000+ RMB2.19 |
Sanyo |
- | - | - | - | - | - | - | - | - | - | |
MOSFET N-ch 10A 600V SuperMESH D2PAK |
|
/个 (每包:5个)
5+ RMB14.04
25+ RMB12.15
50+ RMB10.86
125+ RMB9.56
250+ RMB8.61 |
STMicroelectronics |
增强功能 | N | 单路 | ±30V | 10A | 0.75Ω | - | 55ns | 20ns | - | |
MOSFET N-ch HEXFET 60V 300A D2PAK-7 |
|
个
1+ RMB48.03
5+ RMB40.59
10+ RMB36.23
20+ RMB31.98
50+ RMB28.79 |
International Rectifier |
增强功能 | N | 单路;五源 | ±16V | 300A | 0.0019Ω | - | 89ns | 81ns | - | |
STS4DPF30L MOSFET |
|
/个 (每包:5个)
5+ RMB10.62
25+ RMB7.85
100+ RMB6.55
250+ RMB5.75
500+ RMB5.06 |
STMicroelectronics |
增强功能 | P | 双路;双漏极 | ±16V | 4A | 0.08Ω | - | 125ns | 25ns | - | |
SEMI,IRFB4321PBF |
|
个
1+ RMB50.50
25+ RMB44.96
100+ RMB38.70
250+ RMB33.51 |
International Rectifier |
增强功能 | N | 单路 | ±30V | 83A | 0.015Ω | - | 25ns | 18ns | - | |
Transistor,MOSFET,HEXFET,IRLL2703 |
|
个
1+ RMB21.48
25+ RMB14.87
100+ RMB11.08
250+ RMB10.81
500+ RMB10.54 |
International Rectifier |
增强功能 | N | 单路;双漏极 | ±16V | 5.5A | 0.045Ω | - | 6.9ns | 7.4ns | - | |
MOSFET,N-ch,20V/2A,0.44ohm@4V,SCH6 |
|
/个 (每包:5个)
5+ RMB5.00
50+ RMB4.17
200+ RMB3.46
500+ RMB3.10
1000+ RMB2.95 |
Sanyo |
- | - | - | - | - | - | - | - | - | - | |
MOSFET,FQP50N06 |
|
/个 (每包:5个)
5+ RMB11.51
25+ RMB10.09
100+ RMB7.67
250+ RMB6.61
500+ RMB6.31 |
Fairchild Semiconductor |
增强功能 | N | 单路 | ±25V | 50A | 0.022Ω | - | 60ns | 15ns | - | |
MOSFET,Nch,30V/0.5A,0.6ohm/4V,SC-59 |
|
/个 (每包:10个)
10+ RMB3.89
50+ RMB3.21
200+ RMB2.78
500+ RMB2.37
1000+ RMB2.11 |
ROHM |
增强功能 | N | 单路 | ±20V | 0.5A | 0.55Ω | - | 15ns | 10ns | - | |
MOSFET,FDW2508P |
|
/个 (每包:5个)
5+ RMB12.15
25+ RMB10.56
100+ RMB8.97
250+ RMB8.32
500+ RMB7.67 |
Fairchild Semiconductor |
增强功能 | P | 双路;双源 | ±8V | 6A | 0.018Ω | - | 122ns | 14ns | - | |
2SK3700(F) |
|
个
1+ RMB27.73
25+ RMB22.18
100+ RMB16.64 |
Toshiba |
增强功能 | N | 单路 | ±30V | 5A | 2.5Ω | - | - | - | - | |
MOSFET N-ch 120A 100V STripFET II D2PAK |
|
/个 (每包:2个)
2+ RMB26.90
10+ RMB23.25
20+ RMB20.89
50+ RMB18.29
100+ RMB16.52 |
STMicroelectronics |
增强功能 | N | 单路 | ±20V | 120A | 0.0105Ω | - | 132ns | 25ns | - | |
MOSFET,FDMS5672 |
|
/个 (每包:5个)
5+ RMB13.69
25+ RMB12.63
100+ RMB11.45
250+ RMB11.15
500+ RMB10.62 |
Fairchild Semiconductor |
增强功能 | N | 单路;四漏极,三源 | ±20V | 10.6A | 0.0115Ω | - | 22ns | 16ns | - | |
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