• 1351
• ISL9N306AD3
• Fairchild Semiconductor
• N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs, 30 V, 50 A, 6 mohm
• 11页
• 254K

• 1352
• ISL9N306AD3ST
• Fairchild Semiconductor
• N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs, 30 V, 50 A, 6 mohm
• 11页
• 254K

• 1353
• ISL9N306AP3
• Fairchild Semiconductor
• N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFET
• 11页
• 205K

• 1354
• ISL9N306AS3ST
• Fairchild Semiconductor
• N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFET
• 11页
• 205K

• 1355
• IC61C256AH-10J
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1356
• IC61C256AH-10N
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1357
• IC61C256AH-10T
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1358
• IC61C256AH-10U
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1359
• IC61C256AH-12J
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1360
• IC61C256AH-12JI
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1361
• IC61C256AH-12N
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1362
• IC61C256AH-12NI
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1363
• IC61C256AH-12T
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1364
• IC61C256AH-12TI
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1365
• IC61C256AH-12U
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1366
• IC61C256AH-12UI
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1367
• IC61C256AH-15J
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1368
• IC61C256AH-15JI
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1369
• IC61C256AH-15N
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1370
• IC61C256AH-15NI
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1371
• IC61C256AH-15T
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1372
• IC61C256AH-15TI
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1373
• IC61C256AH-15U
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1374
• IC61C256AH-15UI
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1375
• IC61C256AH-20J
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1376
• IC61C256AH-20JI
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1377
• IC61C256AH-20N
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1378
• IC61C256AH-20NI
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1379
• IC61C256AH-20T
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1380
• IC61C256AH-20TI
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1381
• IC61C256AH-20U
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1382
• IC61C256AH-20UI
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1383
• IC61C256AH-25JI
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1384
• IC61C256AH-25NI
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1385
• IC61C256AH-25TI
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1386
• IC61C256AH-25UI
• Integrated Circuit Solution Inc.
• 32K x 8 High Speed SRAM
• 页
• K

• 1387
• ICX086AKB
• Sony Corporation
• 1/4-inch CCD Image Sensor for NTSC Color Video Cameras
• 17页
• 321K

• 1388
• ICX206AKB
• Sony Corporation
• Image Sensor
• 页
• K

• 1389
• K4E640812E-JC/L-45
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 190K

• 1390
• K4E640812E-JC/L-50
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 190K

• 1391
• K4E640812E-JC/L-60
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 190K

• 1392
• K4E640812E-TC/L-45
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 190K

• 1393
• K4E640812E-TC/L-50
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 190K

• 1394
• K4E640812E-TC/L-60
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 190K

• 1395
• K4E660812E-JC/L-45
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 190K

• 1396
• K4E660812E-JC/L-50
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 190K

• 1397
• K4E660812E-JC/L-60
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 190K

• 1398
• K4E660812E-TC/L-45
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 190K

• 1399
• K4E660812E-TC/L-50
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 190K

• 1400
• K4E660812E-TC/L-60
• Samsung Semiconductor, Inc.
• 8M x 8bit CMOS Dynamic RAM with Extended Data Out
• 21页
• 190K