• 11851
• 2SC2853
• Renesas Technology America, Inc.
• Silicon NPN Epitaxial
• 5页
• 23K

• 11852
• 2SC2854
• Renesas Technology America, Inc.
• Silicon NPN Epitaxial
• 5页
• 23K

• 11853
• 2SC3824
• Panasonic Industrial Sales (Taiwan) Co., Ltd.
• Silicon NPN Triple Diffusion Planar Type Power Transistor
• 4页
• 100K

• 11854
• 2SC3824A
• Panasonic Industrial Sales (Taiwan) Co., Ltd.
• Silicon NPN Triple Diffusion Planar Type Power Transistor
• 4页
• 100K

• 11855
• 2SC477
• NPN High Frequency Transistor
• 页
• K

• 11856
• 2SC4796
• Renesas Technology America, Inc.
• Silicon NPN Triple Diffused
• 6页
• 33K

• 11857
• 2SC4883
• Allegro MicroSystems, Inc.
• Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1859/A)
• 1页
• 23K

• 11858
• 2SC4883A
• Allegro MicroSystems, Inc.
• Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1859/A)
• 1页
• 23K

• 11859
• 2SC5182-T1
• NEC Electronics, Inc.
• NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
• 12页
• 46K

• 11860
• 2SC5182-T2
• NEC Electronics, Inc.
• NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
• 12页
• 46K

• 11861
• 2SC5183R-T1
• NEC Electronics, Inc.
• NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
• 8页
• 95K

• 11862
• 2SC5183R-T2
• NEC Electronics, Inc.
• NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
• 8页
• 95K

• 11863
• 2SC5184-T1
• NEC Electronics, Inc.
• NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
• 12页
• 48K

• 11864
• 2SC5184-T2
• NEC Electronics, Inc.
• NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
• 12页
• 48K

• 11865
• 2SC5185FB-T1
• NEC Corporation
• NPN Epitaxial Silicon Transistor in Super Mini-Mold Package for Low-Noise Microwave Amplification
• 12页
• 50K

• 11866
• 2SC5185FB-T2
• NEC Corporation
• NPN Epitaxial Silicon Transistor in Super Mini-Mold Package for Low-Noise Microwave Amplification
• 12页
• 50K

• 11867
• 2SC5186
• NEC Electronics, Inc.
• NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICAT
• 12页
• 48K

• 11868
• 2SC5186-T1
• NEC Electronics, Inc.
• NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICAT
• 12页
• 48K

• 11869
• 2SC5622
• 松下資訊科技
• Silicon NPN triple diffusion mesa type
• 2页
• 57K

• 11870
• 2SC5624
• Renesas Technology America, Inc.
• Silicon NPN Epitaxial High Frequency Low Noise Amplifier
• 10页
• 62K

• 11871
• 2SC568
• NPN High Frequency Transistor
• 页
• K

• 11872
• 2SC5791
• Sanyo Semiconductor Corporation
• NPN Triple Diffused Planar Silicon Transistor
• 4页
• 31K

• 11873
• 2SC5809
• Panasonic Industrial Sales (Taiwan) Co., Ltd.
• Silicon NPN Triple Diffusion Planar Type Power Transistor
• 3页
• 71K

• 11874
• 2SC717
• NPN High Frequency Transistor
• 页
• K

• 11875
• 2SC817
• NPN High Frequency Transistor
• 页
• K

• 11876
• 2SC829
• NPN High Frequency Transistor
• 页
• K

• 11877
• 2SC838
• NPN High Frequency Transistor
• 页
• K

• 11878
• 2SC839
• NPN High Frequency Transistor
• 页
• K

• 11879
• 2SC922
• NPN High Frequency Transistor
• 页
• K

• 11880
• 2SC929
• NPN High Frequency Transistor
• 页
• K

• 11881
• 2SC930
• NPN High Frequency Transistor
• 页
• K

• 11882
• 2SC947
• NPN High Frequency Transistor
• 页
• K

• 11883
• 2SC948
• NPN High Frequency Transistor
• 页
• K

• 11884
• 2SD1177
• Renesas Technology America, Inc.
• Silicon NPN Epitaxial
• 5页
• 33K

• 11885
• 2SD2134
• 松下資訊科技
• Silicon NPN epitaxial planar type
• 3页
• 54K

• 11886
• 2SD2256
• Renesas Technology America, Inc.
• Silicon NPN Triple Diffused
• 5页
• 34K

• 11887
• 2SD2399
• ROHM
• NPN Darlington Transistor
• 5页
• 370K

• 11888
• 2SD2639
• Sanyo Semiconductor Corporation
• NPN Triple Diffused Planar Silicon Transistor
• 4页
• 29K

• 11889
• 2SD2652
• ROHM CO., LTD.
• General purpose amplification (12V, 1.5A)
• 2页
• 64K

• 11890
• 2SD2655
• Renesas Technology America, Inc.
• Silicon NPN Epitaxial Planer Low Frequency Power Amplifier Transistor
• 8页
• 94K

• 11891
• 2SD2671TL
• ROHM CO., LTD.
• Low Frequency Amplifier
• 2页
• 45K

• 11892
• 2SK1192
• MOS FET
• 1页
• 33K

• 11893
• 2SK2618LS
• Sanyo Semiconductor Corporation
• N- Channel MOS Silicon FET Very High-Speed Switching Applications
• 1页
• 9K

• 11894
• 2SK3132
• Toshiba America, Inc.
• Field Effect Transistor Silicon N Channel MOS Type (Pi-MOS V)
• 5页
• 291K

• 11895
• 2SK3297
• NEC Corporation
• Switching N-Channel Power MOS FET Industrial Use
• 8页
• 67K

• 11896
• 2SK3520-01MR
• Fuji Electric Holdings Co., Ltd.
• N-Channel Silicon Power MOSFET
• 4页
• 105K

• 11897
• 36MB10A
• International Rectifier Corp.
• SINGLE PHASE BRIDGE
• 6页
• 86K

• 11898
• 36MB140A
• International Rectifier Corp.
• Single Phase Bridge
• 6页
• 46K

• 11899
• 36MB160A
• International Rectifier Corp.
• Single Phase Bridge
• 6页
• 46K

• 11900
• 36MB5A
• International Rectifier Corp.
• SINGLE PHASE BRIDGE
• 6页
• 86K